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*this description applies only for the 8 GB. 16 GB is the same but double the GB*
DESCRIPTION
NTBSD4N32SP-08 is a 1G x 64-bit (8GB) DDR4-3200 CL22 SDRAM
(Synchronous DRAM), 1Rx8, non-ECC memory module, based on
eight 1G x 8-bit FBGA components per module. The SPD is
programmed to JEDEC standard latency DDR4-3200 timing of 22-22-
22 at 1.2V. Each 260-pin DIMM uses gold contact fingers. The
electrical and mechanical specifications are as follows:
FEATURES
• Power Supply: VDD=1.2V Typical
• VDDQ = 1.2V Typical
• VPP - 2.5V Typical
• VDDSPD=2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.18” (30.00mm)
• RoHS Compliant and Halogen-Free
SPECIFICATIONS
CL(IDD) 22 cycles
Row Cycle Time (tRCmin) 45.75ns(min.)
Refresh to Active/Refresh 350ns(min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 32ns(min.)
Maximum Operating Power TBD W*
UL Rating 94V-0
Operating Temperature 0o C to +70o C
Storage Temperature -40o C to +85o C
*Power will vary depending on the SDRAM used.